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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3 package www..com *Built-in damper diode *High voltage capability APPLICATIONS *For use in horizontal deflection output stages for color TV receives. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION BU208D Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 10 8 15 150 175 -65~175 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.0 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. www..com BU208D SYMBOL MAX UNIT VCEO(SUS Collector-emitter sustaining voltage IC=0.1A; IB=0; 700 V VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2 A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5 A;IB=2 A VCE=1500V;VBE=0 Tj=125 VEB=5V; IC=0 1.3 1.0 2.0 300 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=1A ; VCE=5V 8 VF Diode forward voltage IF=4A 2.0 V fT Transition frequency IC=0.1A ; VCE=5V 7 MHz ts Storage time IC=4.5A;IB=1.8A;VCC=140V LC=0.9Mh;LB=3H 7 s tf Fall time 0.55 s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www..com BU208D Fig.2 Outline dimensions 3 |
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